Formation of nickel silicon and nickel germanium structure at staggered times

ABSTRACT

Systems and methods are provided for generating a semiconductor device on a single semiconductor substrate. A single semiconductor substrate is generated that includes a Silicon material portion and a Germanium material portion. A first set of source/drain contacts is formed from a first metal on the Silicon material portion. The first set of source/drain contacts is annealed with the Silicon material portion at a first temperature. A second set of source/drain contacts is formed from a second metal on the Germanium material portion after heating the semiconductor substrate to the first temperature, and the second set of source/drain contacts is annealed with the Germanium material portion at a second temperature, where the second temperature is less than the first temperature.

FIELD

The technology described in this disclosure relates generally tosemiconductor device fabrication and more particularly to multi-layerstructures.

BACKGROUND

Non-planar transistor structures provide a means to achieve high deviceperformance in a small footprint. The fabrication of such structures isoften limited by the material properties of the substances used tocreate those structures. Performing component formulations in particularorders can increase the menu of available semiconductor configurationsthat can be achieved by avoiding certain component formulationconflicts.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram depicting a patterning of a photo-sensitive layeronto a single semiconductor substrate.

FIG. 2 depicts the semiconductor device after a material removingprocedure and stripping of the photo-sensitive layer.

FIG. 3 depicts the semiconductor device after incorporation of adielectric layer.

FIG. 4 depicts the semiconductor device after incorporation of a gatedielectric material.

FIG. 5 depicts formation of a gate on the NMOS portion of thesemiconductor device.

FIG. 6 depicts formation of Nickel Silicide on the source/drain regionsof the NMOS transistor.

FIG. 7 depicts the formation of an inter-layer dielectric above the NMOStransistor layers.

FIG. 8 depicts formation of an opening for fabrication of the PMOStransistor components.

FIG. 9 depicts incorporation of an additional semiconductor material.

FIG. 10 depicts formation of a gate stack of the PMOS transistor.

FIG. 11 depicts formation of Nickel Germanide on the source/drainregions of the PMOS transistor.

FIG. 12 depicts incorporation of a capping interlayer dielectric.

FIG. 13 is a flow diagram depicting a method of generating asemiconductor device on a single semiconductor substrate.

DETAILED DESCRIPTION

When planning a semiconductor fabrication process, certain materialproperties limit the ability to form different structures. For example,certain semiconductor structure fabrication processes require that thesemiconductor structure be exposed to particular temperature levels(e.g., annealing processes between different materials require differingformation temperatures). While some structures require high temperature,other structures could potentially be damaged by exposure to those hightemperatures. Strategic ordering of component fabrication avoids certaincomponent formulation conflicts and expands the set of semiconductorconfigurations available.

The following figures describe an example where a semiconductor device100 that includes an NMOS transistor 104, having Nickel Silicidesource/drain contacts 126, and a PMOS transistor 106, having NickelGermanide source/drain contacts 150, is formed on a single semiconductorsubstrate 102 (shown in FIGS. 1-12). The following process enables thesestructures to be formed, despite the formation temperature of NickelGermanide for the PMOS 106 transistor being much lower (250-300° C.)than the formation temperature of Nickel Silicide for the NMOStransistor 104 (400-600° C.).

FIG. 1 is a diagram depicting a patterning of a photo-sensitive layeronto a single semiconductor substrate. A Silicon substrate 102 isdivided into regions 104, 106 for forming an NMOS transistor 104 and aPMOS transistor 106, respectively. A buffer layer (e.g., SiO₂) 108 and ahard mask (e.g. Si₃N₄) 110 are formed on the Silicon substrate 102, witha photo-sensitive layer (e.g., Photo-resist) 112 being placed overportions of the regions 104, 106 to preserve underlying layers during amaterial removing procedure (e.g., wet etching, dry etching).

FIG. 2 depicts the semiconductor device 100 after the material removingprocedure and stripping of the photo-sensitive layer 112. The materialremoving procedure eliminated certain portions of the Silicon substrate102, the buffer layer 108, and the hard mask 110 that were not protectedby the photo-sensitive layer 112 that has now been stripped from thesemiconductor device 100. The material removing procedure createscertain recessed regions 114 within the Silicon substrate 102.

FIG. 3 depicts the semiconductor device 100 after incorporation of adielectric layer. Following the material removing procedure, therecessed regions of the Silicon substrate 102 are filled with adielectric material 116, such as SiO₂. The hard mask 110 and bufferlayer 108 are removed (e.g., via chemical-mechanicalpolishing/planarization (CMP) process), leaving the Silicon substrate102 having associated recessed regions containing dielectric material116.

FIG. 4 depicts the semiconductor device 100 after incorporation of agate dielectric material. Following filling the recessed regions 114 ofthe Silicon substrate 102 with dielectric material 116, a gatedielectric material 118 is formed on top of the silicon substrate 102and the dielectric material 116. The gate dielectric material 118 isformed from SiO₂ or a high-k material, such as HfO₂.

FIG. 5 depicts formation of a gate on the NMOS portion 104 of thesemiconductor device 100. A portion of the gate dielectric 118 isremoved from the NMOS portion 104 of the semiconductor device 100,leaving a smaller gate dielectric portion 118 at the left, raisedportion of the silicon substrate 102. A gate electrode (e.g., Al, TiAl,W, TiN, TaN) 120 is deposited on the remaining NMOS side gate dielectric118 to form a gate stack 122. The gate stack 122 is surrounded by aspacer material 124 (e.g., SiO₂, Si₃N₄). The areas of the NMOS raisedSilicon substrate portions formed by an implantation process to theimmediate left and right of the gate stack 122 are designated assource/drain regions 126 of the NMOS transistor 104.

FIG. 6 depicts formation of Nickel Silicide on the source/drain regionsof the NMOS transistor 104. In one embodiment, the Nickel Silicidecontacts 128 on the source/drain regions 126 are formed in stages. Inthat example, a metal layer of Nickel is formed on the source/drainregions 126 of the Silicon substrate 102 to form a first set ofsource/drain contacts 128. The first set of source/drain contacts 128 isannealed with the Silicon material of the source/drain regions 126 at afirst temperature (e.g., 400-600° C.) to form Nickel Silicide. UnreactedNickel is then removed, leaving the Nickel Silicide source/draincontacts 128.

FIGS. 7-12 depict formation of components of a PMOS transistor 106 onthe PMOS region 106 of the single semiconductor substrate 102 at adiffering level of the semiconductor device 100 from the NMOS transistor104. In other embodiments of the disclosure, the NMOS and PMOStransistors 104, 106 are formed on the same or nearby layers of thesemiconductor device 100.

FIG. 7 depicts the formation of an inter-layer dielectric above the NMOStransistor layers. A plurality of contact extensions (e.g., Al, Cu, W,TiN, TaN) 130 are fabricated on the source/drain contacts 128 and thegate electrode 120 to enable connection to those contacts 128 andelectrode 120 from higher layers of the semiconductor device 100. Aninter-layer dielectric (ILD1) 132 is formed on top of the othercomponents from a material such as SiO₂ or PSG.

FIG. 8 depicts formation of an opening for fabrication of the PMOStransistor components. In FIG. 8, a second inter-layer dielectric (ILD2)134 is formed from a material such as SiO₂ or PSG. Further, an opening136 is formed (e.g., via wet or dry etching) in the PMOS region 106 ofthe semiconductor device 100, such as to a depth of the Siliconsubstrate 102.

FIG. 9 depicts incorporation of an additional semiconductor material. InFIG. 9, the opening formed in ILD1 132 and ILD2 134 in FIG. 8 is filledwith a semiconductor material 138, such as a Germanium containingmaterial (e.g., Ge, SiGe). The top of the semiconductor material 138, inone embodiment, is further treated with a chemical-mechanicalpolishing/planarization (CMP) process.

FIG. 10 depicts formation of a gate stack of the PMOS transistor 106. Agate dielectric (e.g. SiO₂ or other High-k material) 140 is formed onthe Germanium containing material 138, and a gate electrode (e.g. W,TiN, TaN) 142 is further formed thereon to generate a gate stack 144.The gate stack 144 is surrounded by a spacer material (e.g., SiO₂,Si₃N₄) 146, and the regions of the Germanium containing material by animplantation process to the left and right of the spacer surrounded gatestack 144 are designated as source/drain regions 148 of the PMOStransistor.

FIG. 11 depicts formation of Nickel Germanide on the source/drainregions of the PMOS transistor 106. In one embodiment, the NickelGermanide contacts 150 on the source/drain regions 148 are formed instages. In that example, a metal layer of Nickel is formed on thesource/drain regions 148 of the Germanium containing material 138 toform a second set of source/drain contacts 150 (the NMOS source draincontacts 128 being the first set). The second set of source/draincontacts 150 is annealed with the Germanium material of the source/drainregions 148 at a second temperature (e.g., 250-300° C.) to form NickelGermanide. Unreacted Nickel is then removed, leaving the NickelGermanide source/drain contacts 150. Then, the substrate 102 is annealedat a third temperature (e.g., 600-750° C.) to form a low-resistanceNickel silicide and a low-resistance Nickel Germanide.

The second temperature (e.g., 250-300° C.) used in the annealing processto form the Nickel Germanide is less than the first temperature (e.g.,400-600° C.) used to form the Nickel Silicide at 128. By performing theoperation in the described order, the Nickel Germanide contacts 150 arenever subjected to the first temperature used in the annealing processfor the Nickel Silicide contacts at 128, where the Nickel Germanidecontacts 150 could be damaged by exposure to such contacts.

FIG. 12 depicts incorporation of a capping interlayer dielectric.Contacts (e.g., Al, Cu, W, TiN, TaN) 152 for each of the source/drainregions and the gates of the respective NMOS and PMOS transistors areextended through the second inter-layer dielectric 134, where necessaryand beyond. An additional third inter-layer dielectric (ILD3) 154,formed from a dielectric such as SiO₂ or PSG, is formed around thecontacts 152 to generate a uniform, single substrate semiconductordevice.

FIG. 13 is a flow diagram depicting a method of generating asemiconductor device on a single semiconductor substrate. At 1302, asingle semiconductor substrate is generated that includes a Siliconmaterial portion and a Germanium material portion. At 1304, a first setof source/drain contacts is formed from a first metal on the Siliconmaterial portion. At 1306, the first set of source/drain contacts isannealed with the Silicon material portion at a first temperature. At1308, a second set of source/drain contacts is formed from a secondmetal on the Germanium material portion after heating the semiconductorsubstrate to the first temperature, and at 1310, the second set ofsource/drain contacts is annealed with the Germanium material portion ata second temperature, where the second temperature is less than thefirst temperature.

This written description uses examples to disclose the disclosure,include the best mode, and also to enable a person skilled in the art tomake and use the disclosure. The patentable scope of the disclosure mayinclude other examples that occur to those skilled in the art. Forexample, certain systems and methods include additional steps to forminterconnections and for passivation.

As another example, in a method of generating a semiconductor device ona single semiconductor substrate, a single semiconductor substrate isgenerated that includes a Silicon material portion and a Germaniummaterial portion. A first set of source/drain contacts is formed from afirst metal on the Silicon material portion. The first set ofsource/drain contacts is annealed with the Silicon material portion at afirst temperature. A second set of source/drain contacts is formed froma second metal on the Germanium material portion after heating thesemiconductor substrate to the first temperature, and the second set ofsource/drain contacts is annealed with the Germanium material portion ata second temperature, where the second temperature is less than thefirst temperature.

As a further example, a semiconductor device formed on a singlesemiconductor substrate includes a single semiconductor substrate thatincludes a Silicon material portion and a Germanium material portion. Afirst set of source/drain contacts is formed from a first metal on theSilicon material portion, where the first set of source/drain contactsis annealed with the Silicon material portion at a first temperature. Asecond set of source/drain contacts is formed from a second metal on theGermanium material portion, where the second set of source/draincontacts is formed after the semiconductor substrate was heated to thefirst temperature, wherein the second set of source/drain contacts isannealed with the Germanium material portion at a second temperaturethat is less than the first temperature.

One skilled in the relevant art will recognize that the variousembodiments may be practiced without one or more of the specificdetails, or with other replacement and/or additional methods, materials,or components. Well-known structures, materials, or operations may notbe shown or described in detail to avoid obscuring aspects of variousembodiments of the disclosure. Various embodiments shown in the figuresare illustrative example representations and are not necessarily drawnto scale. Particular features, structures, materials, or characteristicsmay be combined in any suitable manner in one or more embodiments.Various additional layers and/or structures may be included and/ordescribed features may be omitted in other embodiments. Variousoperations may be described as multiple discrete operations in turn, ina manner that is most helpful in understanding the disclosure. However,the order of description should not be construed as to imply that theseoperations are necessarily order dependent. In particular, theseoperations need not be performed in the order of presentation.Operations described herein may be performed in a different order, inseries or in parallel, than the described embodiment. Various additionaloperations may be performed and/or described. Operations may be omittedin additional embodiments.

This written description and the following claims may include terms,such as left, right, top, bottom, over, under, upper, lower, first,second, etc. that are used for descriptive purposes only and are not tobe construed as limiting. For example, terms designating relativevertical position may refer to a situation where a device side (oractive surface) of a substrate or integrated circuit is the “top”surface of that substrate; the substrate may actually be in anyorientation so that a “top” side of a substrate may be lower than the“bottom” side in a standard terrestrial frame of reference and may stillfall within the meaning of the term “top.” The term “on” as used herein(including in the claims) may not indicate that a first layer “on” asecond layer is directly on and in immediate contact with the secondlayer unless such is specifically stated; there may be a third layer orother structure between the first layer and the second layer on thefirst layer. The embodiments of a device or article described herein canbe manufactured, used, or shipped in a number of positions andorientations. Persons skilled in the art will recognize variousequivalent combinations and substitutions for various components shownin the figures.

What is claimed is:
 1. A method of generating a semiconductor device ona single semiconductor substrate, comprising: providing a substratehaving a silicon material portion; forming a first set of source/draincontacts from a first metal on a substrate surface that includes theSilicon material portion; annealing the first metal with the Siliconmaterial portion at a first temperature to form the first set ofsource/drain contacts; subsequent to forming the first set ofsource/drain contacts, disposing a germanium material portion on thesubstrate surface on which the first set of source/drain contacts areformed proximate the silicon material portion; forming a second set ofsource/drain contacts from a second metal on the Germanium materialportion; and annealing the second metal with the Germanium materialportion at a second temperature to form the second set of source/draincontacts, wherein the second temperature is less than the firsttemperature.
 2. The method of claim 1, wherein the first metal and thesecond metal are of the same type.
 3. The method of claim 2, wherein thefirst metal and the second metal both include Nickel.
 4. The method ofclaim 1, wherein the first temperature is in a range of 400-600° C. 5.The method of claim 1, wherein the second temperature is in a range of250-300° C.
 6. The method of claim 1, wherein the second set ofsource/drain contacts is formed at a higher level of the singlesemiconductor substrate than the first set of source/drain contacts isformed.
 7. The method of claim 1, wherein the second set of source/draincontacts is formed at a same level of the single semiconductor substratethan the first set of source/drain contacts is formed.
 8. The method ofclaim 1, wherein the Silicon material portion is part of a Siliconsubstrate, and wherein the Germanium material portion of formed on topof the Silicon substrate.
 9. The method of claim 1, wherein the firstset of source/drain contacts on the Silicon material portion arecomponents of an NMOS transistor, wherein the second set of source/draincontacts on the Germanium portion are components of an PMOS transistor.10. The method of claim 1, further comprising removing an unreactedportion of the first metal or the second metal.
 11. The method of claim1, further comprising forming a dielectric layer and a gate electrode oneach of the Silicon material portion and the Germanium material portionto form two transistors on the single semiconductor substrate.
 12. Asemiconductor device formed on a single semiconductor substrate,comprising; a semiconductor substrate that includes a silicon materialportion defining a first level surface, a first set of source/draincontacts including a first metal formed on the first level surface inthe silicon material portion; a germanium material portion disposedproximate the silicon material portion on the first level surface, thegermanium material portion defines a second level surface higher thanthe first level surface; an inter-layer dielectric layer disposedadjacent to the germanium material portion and covering the first set ofsource/drain contacts in the silicon material portion, wherein a heightof the inter-layer dielectric layer is substantially leveled with thatof the second level surface; and a second set of source/drain contactsincluding a second metal formed on the second level surface in thegermanium material portion.
 13. The device of claim 12, wherein thefirst metal and the second metal are of the same type.
 14. The device ofclaim 13, wherein the first metal and the second metal both includeNickel.
 15. The device of claim 12, wherein the first set ofsource/drain contacts are formed by annealing the first metal with thesilicon material portion at a first temperature in a range of about 400to about 600° C.
 16. The device of claim 12, wherein the second set ofsource/drain contacts are formed by annealing the second metal with thegermanium material portion at a second temperature in a range of about250 to about 300° C.
 17. The device of claim 12, wherein the Siliconmaterial portion is part of a Silicon substrate, and wherein theGermanium material portion of formed on top of the Silicon substrate.18. The device of claim 12, wherein the first set of source/draincontacts on the Silicon material portion are components of an NMOStransistor, wherein the second set of source/drain contacts on theGermanium portion are components of an PMOS transistor.
 19. A method forgenerating a semiconductor device, comprising: providing a substrate ofa first semiconductor material having a first device region and a seconddevice region defined thereon, the substrate defining a first levelsurface; forming a first set of contacts on the first level surface inthe first device region; disposing a first dielectric layer on the firstlevel surface in the first device region to cover the first set ofcontacts, the first dielectric layer defining a height; disposing asecond semiconductor material layer on the first level surface in thesecond device region adjacent to the first dielectric layer, the secondsemiconductor material layer defining a second level surface; whereinthe height of the first dielectric layer is no higher than the secondlevel surface; and disposing a second set of contacts on the secondlevel surface in the second device region.
 20. The method of claim 19,wherein the forming of the first set of contacts includes disposing afirst metal on the first level surface in the first device region, andannealing the first metal at a first temperature; the forming of thesecond set of contacts includes disposing a second metal on the secondlevel surface in the second device region, and annealing the secondmetal at a second temperature after the formation of the first set ofcontacts; the second temperature is less than the first temperature.